s.mi-c.on.(lt.cko% zpioducti, lfnc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 swjtchmode series npn power transistors ... designed for use in high-voltage,high-speed, power switching in inductive circuit, ihey are particularly suited for 11 5 and 220v swttchmode applications such as switching regulator'sjnverters.dc -dc conveter.motor controls, solenoid drive and deflection circuits. features: ?collector-emitter sustaining voltage- vceo-u,," 400v and 300v * collector-emitter saturation voltage - * switching time - 1, =0.7 us (max.) ?. lc =8.0 a * soa and switching aplicatfon information. maximum ratings characteristic collector-emitter voltage collector-emitter voltage emitter-base voltage collector current - continuous -peak base current total power dissipation iqtc = 25c derate above 25c operating and storage junction temperature range symbol vceo vcbv vebo "c 'cm ib pd tj 'tsto mje13008 300 600 MJE13009 400 700 9 12 24 6 100 0.8 -65 to +150 unit v v v a a w w7c c thermal characteristics characteristic thermal resistance junction to case symbol rejc max 1.25 unit "c/w figure -1 power derating f 100 80 60 40 20 25 50 75 100 125 150 tc , temperature(0c) npn mje13008 MJE13009 12 ampere power tranasistors 300-400 volts f 00 watts o j ? t h-ju pm1.base 2. collector 3.emitter 4.collector(case) dim a b c d e f g h 1 j k l m o millimeters min 14.68 9.78 5.01 13.06 3.57 2.42 1.12 072 4.22 1.14 2.20 0.33 2.43 3.70 max 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.96 1.38 2.97 0.55 2.96 3.90 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj seini-conductors assumes no responsibility for any errors or omissions discovered in its use. n.f semi-conductors encourages customers to verify that datasheets are current before placing orders. oiinlitv
mje13008, MJE13009 npn electrical characteristics ( tc = 25c unless otherwise noted ) characteristic symbol mln max unit off characteristics collector-emitter sustaining voltage (lc=10ma,l_=0) mje13008 MJE13009 collector cutoff current ( vcev= rated value, vbe(ofl,=1 .5 v ) ( v^ rated value, vbe(off)=1 .5 v , tc=100 c) emitter cutoff current (veb=9.0v, lc=0) vceo(ius) 'civ 'ebo 300 ?400 1.0 5.0 1.0 v ma ma on characteristics (1) dc current gain (lc=5.0a,vce-5.0v) (ic=8.0a,vce=5.0v) collector-emitter saturation voltage (ic=5.0a,ib=1.0a) (ic=8.0ajb=1.6a) (ic=12a,ib=3.0a) base-emitter saturation voltage (ic=5.0a,ib=1.0a) (ic=8.0a,ib=1.6a) hfe vcc(?t) vm 8.0 6.0 40 30 1.0 1.5 3.0 1.2 1.6 v v dynamic characteristics current gain - bandwidth product ( lc = 500 ma , vce = 10 v ,f = 1.0 mhz ) output capacitance ( ^ = 10 v , ie = 0, f = 0.1 mhz ) 't cob 4.0 180(typ) mhz pf switching characteristics delay time rise time storage time fall time v^-s 125v, ic = 8.0a ib1=-ib2=1.6a tp = 25 us.duty cycle 1.0% |
